Author: Halina Krzyzanowska
Requested Type: Oral
Submitted: 2015-03-27 22:40:53
Co-authors: Y.Fu, K.S. Ni, P.M. Fauchet, N.H. Tolk
6301 Stevenson Center Lane
Nashville, TN 37235
The idea of silicon photonics was pioneered in the 90’s. Despite much research, highly efficient light sources based on silicon structures have not yet been realized. One of the most promising ways of making efficient electrically pumped Si light sources at the standard telecommunication wavelength (1535 nm) is to use the unique properties of Si nanostructures doped with rare earth ions.
This work covers optical and electrical studies of Er doped SiO2/nc-Si multilayers fabricated by rf magnetron sputtering. Understanding and optimization of energy transfer from the Si nanocrystals to Er, limitation of free carrier absorption in Si nanostructures and efficient carrier transport through nm-thick Si layers are necessary to achieve an efficient infrared luminescence. Ultrafast time-resolved photoluminescence indicates that Er+3 ions were excited via both crystalline and amorphous Si nanostructures. Experimental results of pump-induced loss for TE and TM polarization in multislot Er doped SiO2/nc-Si waveguides will be presented. Strong suppression of the free carrier absorption under TM polarization as much as 9 times compared to TE polarization was detected. Carrier transport and infra red electroluminescence under novel, lateral geometry made in the multilayers will be discussed.