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approvedone_page_summary_osi_11.pdf2015-03-27 06:42:17Roger Bosch


Author: Roger HEC Bosch
Requested Type: Oral
Submitted: 2015-03-27 06:41:26

Co-authors: V. Vandalon, W.M.M. Kessels

Contact Info:
Eindhoven University of Technology
De Rondom 70
Eindhoven, Noord-Brab   5612
The Netherlands

Abstract Text:
In this contribution, we report on the spectroscopic second-harmonic (SH) response of zinc oxide thin films that are prepared by atomic layer deposition (ALD). The SH measurements were carried out using a tuneable femtosecond (90 fs) pulsed laser system, which was used to determine the SH response of thin film systems between 2.7 and 3.5 eV. Due to the polycrystalline structure and the C6v symmetry of ZnO, the layer generates a resonantly enhanced bulk second-harmonic signal around 3.3 eV. Furthermore, when the ZnO is deposited on c-Si, also an electric-field-induced SH (EFISH) signal can be generated at the interface. Due to the excellent thickness control of the ALD process, it was possible to study the SH response as a function of thickness. The SH spectra were reproduced using a critical-point model combined with the optical model of Sipe [JOSA B, 1987], where the Sipe model was extended significantly to describe both interface as well as bulk contributions simultaneously. The fits revealed that for ZnO films with a thickness up to 2 nm the SH response is EFISH dominated and it becomes bulk dominated for a film thickness above 10 nm.