|approved||osi_one_page_summary.pdf||2015-03-26 19:37:03||Kurt Hingerl|
Author: Kurt Hingerl
Requested Type: Oral
Submitted: 2015-03-09 11:47:58
Co-authors: A. Alejo-Molina, P. A. Márquez-Aguilar, H. Hardhienata
Johannes Kepler University
Using Group Theory (GT) and the Simplified Bond Hyperpolarizability Model (SBHM), we show that the fourth rank tensor related to third harmonic generation and DC electric field induced second harmonic generation (EFISH) explain with two, respectively one, fit parameter the EFISH experimental results in metal oxide semiconductor structures. We argue that it is possible to reduce the fourth rank tensor describing EFISH to a third rank tensor and further deliver a classical explanation of EFISH regarding symmetry breaking where the term containing $r^3$ in the potential immediately leads to second harmonic generation (SHG). With this classical microscopical model based on the equation of motion we are able to predict that only (111) facets of Si (zincblende semiconductors) will yield EFISH signals, whereas Si/ZB (110) facets as well as Si/ZB (100) facets under normal incidence reflection or transmission do not lead to EFISH. This result follows naturally from the compensating movements of the electrons along their bonds.