|approved||r_carriles_summary.pdf||2015-03-27 15:00:51||Ramon Carriles|
Author: Ramon Carriles
Requested Type: Poster
Submitted: 2015-03-07 23:16:32
Co-authors: R.E.Balderas-Navarro, K. Arimoto, N.Usami
Centro de Investigaciones en Optica AC
Loma del Bosque 115
Leon, Guanajuato 37150
Second harmonic generation (SHG) is a well-known surface sensitive optical technique for studying centrosymmetric materials. This is because bulk second order nonlinear optical effects are forbidden, in the dipole approximation, for such materials. One system that has been extensively studied using SHG is silicon. It has been noted that inhomogeneous strain can lead to enhanced nonlinearities in Silicon. This is an attractive candidate for microphotonic circuits, since Silicon processing is well established.
In this work, we report on second harmonic generation (SHG) spectroscopic measurements performed on strained silicon substrates. The samples consisted on vicinal silicon (001) substrates with a 200 nm thick buffer layer of Si0.982C0.018, followed by a 10 nm thick Si layer. The spectra were taken for different polarization combinations using an optical parametric amplifier. Results from the stressed silicon samples are compared against the spectrum of an unstressed vicinal Si (001) sample similar to the substrate of the stress sample to study to what degree the SHG is sensitive to the stress.